onsemi · FETs & Power MOSFETs · MPN FDP12N50NZ
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| Drain to Source Voltage | 500V |
|---|---|
| Gate Charge(Qg) | 30nC@10V |
| Current - Continuous Drain(Id) | 11.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 170W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 460mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.235nF |
N-Channel 500V 11.5A 170W Through Hole TO-220