onsemi · FETs & Power MOSFETs · MPN FDP12N50
No reviews yet — be the first to review onsemi FDP12N50.
| Gate Charge(Qg) | 30nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Output Capacitance(Coss) | 190pF |
| Current - Continuous Drain(Id) | 11.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 42W |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | 650mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.315nF |
| Type | N-Channel |
500V 11.5A 5V 42W 650mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS