onsemi FDP120N10

onsemi · FETs & Power MOSFETs · MPN FDP120N10

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Specifications

Output Capacitance(Coss)405pF
Pd - Power Dissipation170W
Configuration-
Gate Charge(Qg)66nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)74A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Reverse Transfer Capacitance (Crss@Vds)170pF
RDS(on)9.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.215nF

Technical details

170W 100V 74A 2.5V 9.7mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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