onsemi FDP083N15A-F102

onsemi · FETs & Power MOSFETs · MPN FDP083N15A-F102

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Specifications

Gate Charge(Qg)84nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)1.88nF
Current - Continuous Drain(Id)117A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation294W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)8.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.04nF
TypeN-Channel

Technical details

N-Channel 150V 117A 294W Through Hole TO-220

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