onsemi · FETs & Power MOSFETs · MPN FDP070AN06A0
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| Gate Charge(Qg) | 66nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 510pF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 175W |
| Reverse Transfer Capacitance (Crss@Vds) | 230pF |
| RDS(on) | 7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3nF |
| Type | N-Channel |
60V 80A 4V 175W 7mΩ@10V 1 N-channel N-Channel ITO-220AB-3 Single FETs, MOSFETs RoHS