onsemi FDP060AN08A0

onsemi · FETs & Power MOSFETs · MPN FDP060AN08A0

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Specifications

Gate Charge(Qg)95nC@10V
Drain to Source Voltage75V
Output Capacitance(Coss)800pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation255W
Reverse Transfer Capacitance (Crss@Vds)230pF
RDS(on)13mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.15nF
TypeN-Channel

Technical details

75V 80A 4V 255W 13mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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