onsemi · FETs & Power MOSFETs · MPN FDP054N10
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| Gate Charge(Qg) | 203nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 935pF |
| Current - Continuous Drain(Id) | 144A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 263W |
| Reverse Transfer Capacitance (Crss@Vds) | 390pF |
| RDS(on) | 4.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13.28nF |
| Vgs | ±20V |
N-Channel 100V 144A 263W Through Hole TO-220