onsemi · FETs & Power MOSFETs · MPN FDP053N08B-F102
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 85nC@10V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 146W |
| Reverse Transfer Capacitance (Crss@Vds) | 20.5pF |
| RDS(on) | 4.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.96nF |
N-Channel 80V 120A 146W Through Hole TO-220