onsemi · FETs & Power MOSFETs · MPN FDP047N08-F102
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| Drain to Source Voltage | 75V |
|---|---|
| Gate Charge(Qg) | 152nC@10V |
| Current - Continuous Drain(Id) | 164A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 268W |
| RDS(on) | 4.7Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.415nF |
75V 164A 4.5V 268W 4.7Ω@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS