onsemi FDP047N08-F102

onsemi · FETs & Power MOSFETs · MPN FDP047N08-F102

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Specifications

Drain to Source Voltage75V
Gate Charge(Qg)152nC@10V
Current - Continuous Drain(Id)164A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation268W
RDS(on)4.7Ω@10V
Number1 N-channel
Input Capacitance(Ciss)9.415nF

Technical details

75V 164A 4.5V 268W 4.7Ω@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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