onsemi FDP047N08

onsemi · FETs & Power MOSFETs · MPN FDP047N08

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Specifications

Gate Charge(Qg)117nC@10V
Drain to Source Voltage75V
Output Capacitance(Coss)870pF
Current - Continuous Drain(Id)164A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation268W
Reverse Transfer Capacitance (Crss@Vds)410pF
RDS(on)3.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.08nF
TypeN-Channel

Technical details

N-Channel 75V Through Hole TO-220

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