onsemi · FETs & Power MOSFETs · MPN FDP047AN08A0
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| Gate Charge(Qg) | 92nC@10V |
|---|---|
| Drain to Source Voltage | 75V |
| Output Capacitance(Coss) | 1nF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 310W |
| RDS(on) | 4.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.6nF |
| Type | N-Channel |
75V 80A 4V 310W 4.7mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS