onsemi · FETs & Power MOSFETs · MPN FDP039N08B-F102
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| Gate Charge(Qg) | 133nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 171A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 3.16mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.45nF |
80V 171A 4.5V 214W 3.16mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS