onsemi FDP038AN06A0

onsemi · FETs & Power MOSFETs · MPN FDP038AN06A0

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage60V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation310W
Reverse Transfer Capacitance (Crss@Vds)367pF
RDS(on)3.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.4nF

Technical details

N-Channel 60V 80A 310W Through Hole TO-220

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