onsemi · FETs & Power MOSFETs · MPN FDP032N08B
No reviews yet — be the first to review onsemi FDP032N08B.
| Gate Charge(Qg) | 144nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 1.66nF |
| Current - Continuous Drain(Id) | 211A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 263W |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| RDS(on) | 3.3mΩ@10V |
| Input Capacitance(Ciss) | 10.965nF |
| Type | N-Channel |
80V 211A 4.5V 263W 3.3mΩ@10V N-Channel Single FETs, MOSFETs RoHS