onsemi · FETs & Power MOSFETs · MPN FDP030N06B-F102
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| Gate Charge(Qg) | 99nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 205W |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 3.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.03nF |
N-Channel 60V 120A 205W Through Hole TO-220