onsemi · FETs & Power MOSFETs · MPN FDP025N06
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| Gate Charge(Qg) | 226nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 1.61nF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 395W |
| Reverse Transfer Capacitance (Crss@Vds) | 750pF |
| RDS(on) | 1.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 14.885nF |
| Vgs | ±20V |
N-Channel 60V 120A 395W Through Hole TO-220