onsemi · FETs & Power MOSFETs · MPN FDP023N08B-F102
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| Gate Charge(Qg) | 195nC@10V |
|---|---|
| Drain to Source Voltage | 75V |
| Current - Continuous Drain(Id) | 242A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 245W |
| Reverse Transfer Capacitance (Crss@Vds) | 46.8pF |
| RDS(on) | 1.96mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13.765nF |
N-Channel 75V 242A 245W Through Hole TO-220