onsemi · FETs & Power MOSFETs · MPN FDP020N06B-F102
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| Gate Charge(Qg) | 268nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 313A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 333W |
| Reverse Transfer Capacitance (Crss@Vds) | 127pF |
| RDS(on) | 1.65mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 20.93nF |
N-Channel 60V 313A 333W Through Hole TO-220