onsemi · FETs & Power MOSFETs · MPN FDN86501LZ
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 2.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.9pF |
| RDS(on) | 89mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 335pF |
60V 2.6A 3V 1.5W 89mΩ@10V 1 N-channel SOT-23-3 Single FETs, MOSFETs RoHS