onsemi · FETs & Power MOSFETs · MPN FDN86265P
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| Gate Charge(Qg) | 4.1nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 800mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 1.2Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 210pF |
150V 800mA 4V 1.5W 1.2Ω@10V 1 P-Channel SOT-23-3 Single FETs, MOSFETs RoHS