onsemi · FETs & Power MOSFETs · MPN FDN86246
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 1.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.6pF |
| RDS(on) | 195mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 225pF |
150V 1.6A 1.5W 195mΩ@10V 1 N-channel SOT-23-3 Single FETs, MOSFETs RoHS