onsemi · FETs & Power MOSFETs · MPN FDN8601
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| Gate Charge(Qg) | 5nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 65pF |
| Current - Continuous Drain(Id) | 2.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 175mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 210pF |
| Type | N-Channel |
100V 2.7A 4V 1.5W 175mΩ@6V 1 N-channel N-Channel SOT-23-3 Single FETs, MOSFETs RoHS