onsemi · FETs & Power MOSFETs · MPN FDN5632N-F085
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 1.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 1.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 98mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 475pF |
N-Channel 60V 1.7A 1.1W Surface Mount SOT-23-3