onsemi FDN5632N-F085

onsemi · FETs & Power MOSFETs · MPN FDN5632N-F085

No reviews yet — be the first to review onsemi FDN5632N-F085.

Specifications

Gate Charge(Qg)-
Drain to Source Voltage60V
Current - Continuous Drain(Id)1.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.1W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)98mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)475pF

Technical details

N-Channel 60V 1.7A 1.1W Surface Mount SOT-23-3

Related FETs & Power MOSFETs