onsemi FDN5630

onsemi · FETs & Power MOSFETs · MPN FDN5630

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Specifications

Gate Charge(Qg)10nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)95pF
Current - Continuous Drain(Id)1.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)100mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)560pF
TypeN-Channel

Technical details

N-Channel 60V 1.7A 0.5W Surface Mount SOT-23

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