onsemi · FETs & Power MOSFETs · MPN FDN5618P
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| Gate Charge(Qg) | 8.6nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 52pF |
| Current - Continuous Drain(Id) | 1.25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF |
| RDS(on) | 230mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 430pF |
| Type | P-Channel |
P-Channel 60V 1.25A 0.5W Surface Mount SOT-23-3