onsemi FDN537N

onsemi · FETs & Power MOSFETs · MPN FDN537N

No reviews yet — be the first to review onsemi FDN537N.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)8.4nC@10V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)6.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)36mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)465pF
TypeN-Channel

Technical details

N-Channel 30V 6.5A 1.5W Surface Mount SOT-23-3

Related FETs & Power MOSFETs