onsemi FDN361BN

onsemi · FETs & Power MOSFETs · MPN FDN361BN

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Specifications

Gate Charge(Qg)1.8nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)47pF
Current - Continuous Drain(Id)1.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)160mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)193pF
TypeN-Channel

Technical details

30V 1.4A 3V 500mW 160mΩ@4.5V 1 N-channel N-Channel SOT-23-3 Single FETs, MOSFETs RoHS

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