onsemi · FETs & Power MOSFETs · MPN FDN361BN
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| Gate Charge(Qg) | 1.8nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 47pF |
| Current - Continuous Drain(Id) | 1.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF |
| RDS(on) | 160mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 193pF |
| Type | N-Channel |
30V 1.4A 3V 500mW 160mΩ@4.5V 1 N-channel N-Channel SOT-23-3 Single FETs, MOSFETs RoHS