onsemi · FETs & Power MOSFETs · MPN FDN361AN
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 4nC@5V |
| Current - Continuous Drain(Id) | 1.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 150mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 220pF |
| Type | N-Channel |
30V 1.8A 3V 500mW 150mΩ@4.5V 1 N-channel N-Channel SOT-23-3 Single FETs, MOSFETs RoHS