onsemi FDN360P

onsemi · FETs & Power MOSFETs · MPN FDN360P

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Specifications

Configuration-
Gate Charge(Qg)9nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)83pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)39pF
RDS(on)125mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)298pF

Technical details

P-Channel 30V 2A 0.5W Surface Mount SOT-23

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