onsemi FDN359AN

onsemi · FETs & Power MOSFETs · MPN FDN359AN

No reviews yet — be the first to review onsemi FDN359AN.

Specifications

Gate Charge(Qg)7nC@5V
Drain to Source Voltage30V
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)2.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)60mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)480pF
TypeN-Channel

Technical details

N-Channel 30V 2.7A 0.5W Surface Mount SOT-23

Related FETs & Power MOSFETs