onsemi · FETs & Power MOSFETs · MPN FDN358P
No reviews yet — be the first to review onsemi FDN358P.
| Gate Charge(Qg) | 5.6nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 56pF |
| Current - Continuous Drain(Id) | 1.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 460mW |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 200mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 182pF |
| Type | P-Channel |
P-Channel 30V 1.5A 0.46W Surface Mount SOT-23