onsemi FDN357N

onsemi · FETs & Power MOSFETs · MPN FDN357N

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Specifications

Gate Charge(Qg)5.9nC@5V
Drain to Source Voltage30V
Output Capacitance(Coss)145pF
Current - Continuous Drain(Id)1.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)90mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)235pF
TypeN-Channel

Technical details

N-Channel 30V 1.9A 0.5W Surface Mount SOT-23

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