onsemi · FETs & Power MOSFETs · MPN FDN352AP
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 1.9nC@4.5V |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 40pF |
| Current - Continuous Drain(Id) | 1.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 300mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 150pF |
P-Channel 30V 1.3A 0.5W Surface Mount SOT-23