onsemi FDN339AN

onsemi · FETs & Power MOSFETs · MPN FDN339AN

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Specifications

Gate Charge(Qg)10nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)175pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)85pF
RDS(on)50mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)700pF
TypeN-Channel

Technical details

N-Channel 20V 3A 0.5W Surface Mount SOT-23-3

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