onsemi · FETs & Power MOSFETs · MPN FDN336P
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| Output Capacitance(Coss) | 80pF |
|---|---|
| Pd - Power Dissipation | 500mW |
| Configuration | - |
| Gate Charge(Qg) | 3.6nC@4.5V |
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 1.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 270mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 330pF |
P-Channel 20V 1.3A 0.5W Surface Mount SOT-23