onsemi FDN335N

onsemi · FETs & Power MOSFETs · MPN FDN335N

No reviews yet — be the first to review onsemi FDN335N.

Specifications

Gate Charge(Qg)5nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)1.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)70mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)310pF
TypeN-Channel

Technical details

N-Channel 20V 1.7A 0.5W Surface Mount SOT-23-3

Related FETs & Power MOSFETs