onsemi FDN327N

onsemi · FETs & Power MOSFETs · MPN FDN327N

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Specifications

Gate Charge(Qg)6.3nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)87pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)48pF
RDS(on)120mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)423pF
TypeN-Channel

Technical details

N-Channel 20V 8A 0.5W Surface Mount SOT-23

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