onsemi · FETs & Power MOSFETs · MPN FDN028N20
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| Gate Charge(Qg) | 6nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 6.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 87pF |
| RDS(on) | 23mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 600pF |
20V 6.1A 1.5V 1.5W 23mΩ@4.5V 1 N-channel SOT-23-3 Single FETs, MOSFETs RoHS