onsemi · FETs & Power MOSFETs · MPN FDMT80060DC
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| Gate Charge(Qg) | 170nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 292A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 156W |
| Reverse Transfer Capacitance (Crss@Vds) | 87pF |
| RDS(on) | 1.1mΩ@8V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 14.406nF |
60V 292A 2V 156W 1.1mΩ@8V 1 N-channel DualCool-88-8 Single FETs, MOSFETs RoHS