onsemi · FETs & Power MOSFETs · MPN FDMT800150DC-22897
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| Drain to Source Voltage | 150V |
|---|---|
| Gate Charge(Qg) | 108nC@10V |
| Current - Continuous Drain(Id) | 66A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 156W |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | 6.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.205nF |
150V 66A 4V 156W 6.5mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS