onsemi FDMT800100DC

onsemi · FETs & Power MOSFETs · MPN FDMT800100DC

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage100V
Current - Continuous Drain(Id)162A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation156W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)2.95mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.835nF

Technical details

N-Channel 100V 162A 156W Surface Mount DualCool-88-8

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