onsemi · FETs & Power MOSFETs · MPN FDMS8888
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 51A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 42W |
| Reverse Transfer Capacitance (Crss@Vds) | 161pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.195nF |
30V 51A 1.9V 42W 1 N-channel Power-56-8 Single FETs, MOSFETs RoHS