onsemi FDMS8680

onsemi · FETs & Power MOSFETs · MPN FDMS8680

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage30V
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)145pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.59nF

Technical details

N-Channel 30V 35A 50W Power56-8

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