onsemi FDMS8662

onsemi · FETs & Power MOSFETs · MPN FDMS8662

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)100nC@10V
Output Capacitance(Coss)3.145nF
Current - Continuous Drain(Id)159A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)435pF
RDS(on)3mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)6.42nF
TypeN-Channel

Technical details

30V 159A 3V 83W 3mΩ@4.5V 1 N-channel N-Channel PQFN-8(5x6) Single FETs, MOSFETs RoHS

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