onsemi FDMS86550ET60

onsemi · FETs & Power MOSFETs · MPN FDMS86550ET60

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Specifications

Gate Charge(Qg)90nC@8V
Drain to Source Voltage60V
Output Capacitance(Coss)2.14nF
Current - Continuous Drain(Id)245A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation187W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)1.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.235nF
TypeN-Channel

Technical details

60V 245A 3.3V 187W 1.4mΩ@10V 1 N-channel N-Channel Power-56-8 Single FETs, MOSFETs RoHS

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