onsemi · FETs & Power MOSFETs · MPN FDMS86550
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 234A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
| Pd - Power Dissipation | 156W |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF |
| RDS(on) | 1.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.235nF |
60V 234A 3.3V 156W 1.4mΩ@10V 1 N-channel Power-56-8 Single FETs, MOSFETs RoHS