onsemi · FETs & Power MOSFETs · MPN FDMS86369-F085
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 107W |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF |
| RDS(on) | 5.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.47nF |
80V 3V 107W 5.9mΩ@10V 1 N-channel Power-56-8 Single FETs, MOSFETs RoHS