onsemi FDMS86350ET80

onsemi · FETs & Power MOSFETs · MPN FDMS86350ET80

No reviews yet — be the first to review onsemi FDMS86350ET80.

Specifications

Gate Charge(Qg)-
Drain to Source Voltage80V
Current - Continuous Drain(Id)198A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation187W
Reverse Transfer Capacitance (Crss@Vds)31pF
RDS(on)2.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.03nF

Technical details

N-Channel 80V 198A 187W Surface Mount Power-56-8

Related FETs & Power MOSFETs