onsemi FDMS86350

onsemi · FETs & Power MOSFETs · MPN FDMS86350

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Specifications

Gate Charge(Qg)155nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)1.825nF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation156W
Reverse Transfer Capacitance (Crss@Vds)31pF
RDS(on)3.2mΩ@8V
Number1 N-channel
Input Capacitance(Ciss)10.68nF
TypeN-Channel

Technical details

N-Channel 80V 130A 156W Surface Mount Power(5x6)

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