onsemi FDMS86322

onsemi · FETs & Power MOSFETs · MPN FDMS86322

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage80V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)7.65mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3nF

Technical details

N-Channel 80V 60A 104W Power56-8

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